SI7901EDN Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7901EDN
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –800 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "12 V
V_DS = –16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V, T_J = 85_C
V_DS v –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –6.3 A
V_GS = –2.5 V, I_D = –5.3 A
V_GS = –1.8 V, I_D = –1 A
V_DS = –15 V, I_D = –6.3 A
I_S = –2.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –10 V, V_GS = –4.5 V, I_D = –6.3 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
Min
Typ
Max Unit
–0.45
V
"1.5
nA
"10
mA
–1
mA
–5
–20
A
0.041
0.048
0.057
0.068
W
0.072
0.090
14
S
–0.8
–1.2
V
12
18
2.5
nC
2.9
2.5
4
4
6
ms
15
23
12
18
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
4
8
12
16
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
2
10,000
1,000
Gate Current vs. Gate-Source Voltage
100
10
T_J = 150_C
1
0.1
0.01
0.001
0
T_J = 25_C
3
6
9
12
15
V_GS – Gate-to-Source Voltage (V)
Document Number: 71430
S-03710—Rev. A, 14-May-01