SI7901EDN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si7901EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 2.5 V
16
16
12
2V
12
Transfer Characteristics
T_C = –55_C
25_C
125_C
8
8
1.5 V
4
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
0.12
V_GS = 1.8 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
2000
Capacitance
1600
C_iss
0.09
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 6.3 A
3
2
1
1200
800
400
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.5
V_GS = 4.5 V
I_D = 6.3 A
1.3
1.1
0.9
0
0
2
4
6
8
10 12 14
Q_g – Total Gate Charge (nC)
Document Number: 71430
S-03710—Rev. A, 14-May-01
0.7
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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