SI7901EDN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si7901EDN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.048 @ V_GS = –4.5 V
–20
0.068 @ V_GS = –2.5 V
0.090 @ V_GS = –1.8 V
I_D (A)
–6.3
–5.3
–4.6
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 4500 V
D Ultra-Low Thermal Resistance, PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Bidirectional Switch
PowerPAKt 1212-8
S₁
S₂
3.30 mm
S1
1
G1
3.30 mm
2
S2
3
G2
4
G₁
D1
8
D1
7
D2
6
D2
5
Bottom View
G₂
3 kW
D₁
P-Channel MOSFET
3 kW
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"12
–6.3
–4.3
–4.5
–3.1
–20
–2.3
–1.1
2.8
1.3
1.5
0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71430
S-03710—Rev. A, 14-May-01
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
35
75
4
Maximum
44
94
5
Unit
_C/W
www.vishay.com
1