SI7900AEDN Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

Si7900AEDN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.4
0.04
0.2
Threshold Voltage
I_D = 250 mA
0.03
I_D = 8.5 A
- 0.0
0.02
- 0.2
0.01
- 0.4
0.00
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
200
160
120
80
40
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
Safe Operating Area, Junction-to-Case
100
Limited by r_DS(on)
10
1 ms
1
0.1
T_C = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
0
0.001
0.01
0.1
1
10
Time (sec)
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 115_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72287
S-31418—Rev. A, 07-Jun-03