SI7900AEDN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

New Product
Si7900AEDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
25
25
V_GS = 5 thru 2 V
20
20
15
1.5 V
15
10
10
Transfer Characteristics
T_C = - 55_C
25_C
125_C
5
5
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06
0.05
Gate Charge
5
V_DS = 10 V
4
I_D = 6.5 A
0.04
3
0.03
0.02
0.01
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 8.5 A
2
1
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
1.2
T_J = 150_C
T_J = 25_C
1
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 72287
S-31418—Rev. A, 07-Jun-03
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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