SI7900AEDN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

New Product
Si7900AEDN
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.026 @ V_GS = 4.5 V
20
0.030 @ V_GS = 2.5 V
0.036 @ V_GS = 1.8 V
PowerPAK 1212-8
I_D (A)
8.5
8
7
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakr Package
- Low-Thermal Resistance, R_thJC
- Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
D
D
3.30 mm
S1
1
G1
3.30 mm
2
S2
3
G2
4
G₁
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7900AEDN-T1
2.6 kW
S₁
N-Channel
2.6 kW
G₂
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
8.5
6
6.4
4.3
30
2.9
1.4
3.1
1.5
1.6
0.79
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72287
S-31418—Rev. A, 07-Jun-03
Symbol
R_thJA
R_thJC
Typical
32
65
2.2
Maximum
40
82
2.8
Unit
_C/W
www.vishay.com
1