SI7900AEDN Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

Si7900AEDN
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "12 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 8.5 A
V_GS = 2.5 V, I_D = 8 A
V_GS = 1.8 V, I_D = 7 A
V_DS = 10 V, I_D = 8.5 A
I_S = 2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 6.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
Min Typ Max Unit
0.40
0.9
V
"1
mA
"10
mA
1
mA
20
20
A
0.020
0.026
0.022
0.030
W
0.026
0.036
25
S
0.65
1.1
V
10.5
16
1.9
nC
1.8
0.85
1.25
1.3
2.0
ms
8.6
13
4.2
6.5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
10,000
Gate Current vs. Gate-Source Voltage
8
1,000
100
6
T_J = 150_C
10
4
1
2
T_J = 25_C
0.1
0
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
2
0.01
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Document Number: 72287
S-31418—Rev. A, 07-Jun-03