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SI7820DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET
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Si7820DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
ID = 250 mA
0.2
Single Pulse Power, Juncion-to-Ambient
50
40
−0.0
30
−0.2
−0.4
20
−0.6
−0.8
10
−1.0
−1.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
1000
10
Safe Operating Area
IDM Limited
rDS(on) Limited
P(t) = 0.0001
1
0.1
0.01
0.001
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
VDS − Drain-to-Source Voltage (V)
1000
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72581
S-32411—Rev. B, 24-Nov-03
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