SI7820DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
N-Channel 200-V (D-S) MOSFET
Si7820DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
200
r_DS(on) (W)
0.240 @ V_GS = 10 V
0.250 @ V_GS = 6 V
PowerPAK 1212-8
I_D (A)
2.6
2.5
FEATURES
D PWM-Optimized TrenchFETr Power MOSFET
D 100% R_g Tested
D Avalanche Tested
APPLICATIONS
D Primary Side Switch
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Ordering Information: Si7820DN-T1—E3
Bottom View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
200
"20
2.6
1.7
2.1
1.3
10
3.2
1.3
3.5
0.6
3.8
1.5
2.0
0.8
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72581
S-32411—Rev. B, 24-Nov-03
Symbol
R_thJA
R_thJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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