SI7820DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
Si7820DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.35
Capacitance
800
0.28
0.21
0.14
V_GS = 6 V
V_GS = 10 V
700
C_iss
600
500
400
300
0.07
200
C_oss
C_rss
100
0.00
0
2
4
6
8
10
I_D − Drain Current (A)
0
0
20
40
60
80
V_DS − Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 100 V
8
I_D = 2.6 A
On-Resistance vs. Junction Temperature
2.4
V_GS = 10 V
2.0
I_D = 2.6 A
6
1.6
4
1.2
2
0.8
0
0
2
4
6
8
10
12
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.4
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.8
T_J = 150_C
0.6
I_D = 2.6 A
0.4
T_J = 25_C
0.2
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72581
S-32411—Rev. B, 24-Nov-03
0.0
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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