SI7820DN Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si7820DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
2
V_DS = 0 V, V_GS = "20 V
V_DS = 200 V, V_GS = 0 V
V_DS = 200 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
10
V_GS = 10 V, I_D = 2.6 A
V_GS = 6 V, I_D = 2.5 A
V_DS = 15 V, I_D = 2.6 A
I_S = 3.2 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 100 V, V_GS = 10 V, I_D = 2.6 A
f = 1 MHz
1
V_DD = 100 V, R_L = 100 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3.2 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ Max Unit
4
V
"100
nA
1
mA
5
A
0.200
0.240
W
0.210
0.250
8
S
0.78
1.2
V
12.1
18
2.5
nC
4.1
2.3
3.9
W
11
20
12
20
30
45
ns
17
30
65
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V_GS = 10 thru 6 V
5V
8
6
4
2
4V
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
10
8
6
4
T_C = 125_C
2
25_C
−55_C
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
Document Number: 72581
S-32411—Rev. B, 24-Nov-03