SI7806BDN Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.6
0.4
I_D = 250 µA
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J − Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
0.01
0.1
1
10
100
600
Time (sec)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
I_D(on)
1 ^Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Single Pulse
10 ^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65 °C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-2
10 ^-1
1
10
Square Wave Pulse Duration (sec)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73081
S-60790-Rev. B, 08-May-06