SI7806BDN Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

TYPICAL CHARACTERISTICS 25 °C unless noted
0.040
0.035
0.030
0.025
0.020
V_GS = 4.5 V
0.015
0.010
V_GS = 10 V
0.005
0.000
0
5 10 15 20 25 30 35 40
I_D − Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
8
I_D = 12.6 A
6
4
2
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Gate Charge
50
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73081
S-60790-Rev. B, 08-May-06
Si7806BDN
Vishay Siliconix
1400
1200
C_iss
1000
800
600
400
C_rss
200
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 12.6 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.030
0.025
I_D = 12.6 A
0.020
I_D = 2 A
0.015
0.010
0.005
0.000
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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