SI7806BDN Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7806BDN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.0145 at V_GS = 10 V
30
0.0205 at V_GS = 4.5 V
I_D (A)
12.6
10.6
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFETS
• PWM Optimized
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
APPLICATIONS
• DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
RoHS
COMPLIANT
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
12.6
8.0
10.1
6.4
A
I_DM
40
Continuous Source Current (Diode Conduction)^a
I_S
3.2
1.3
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.8
1.5
2.0
0.8
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
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