SI7806BDN Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7806BDN
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
r_DS(on)
g_fs
V_GS = 10 V, I_D = 12.6 A
V_GS = 4.5 V, I_D = 10.6 A
V_DS = 15 V, I_D = 12.6 A
Diode Forward Voltage^a
V_SD
I_S = 3.2 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gt
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 4.5 V, I_D = 12.6 A
V_DS = 15 V, V_GS = 10 V, I_D = 12.6 A
f = 10 MHz
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 3.2 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max
Unit
1.0
3
V
± 100
nA
1
µA
5
40
A
0.012 0.0145
Ω
0.017 0.0205
34
S
0.77
1.2
V
8.5
11
19
24
3.6
nC
3.0
2
Ω
8
15
12
20
25
40
ns
10
20
35
70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
40
35
V_GS = 10 thru 5 V
30
4V
25
20
15
10
5
3V
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
10
5
0
0
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 73081
S-60790-Rev. B, 08-May-06