SI7439DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

Si7439DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.3
200
1.0
160
0.7
I_D = 250 mA
120
0.4
80
0.1
−0.2
40
Single Pulse Power
−0.5
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
Limited by
r_DS(on)
10
2
1
Duty Cycle = 0.5
1
10 ms
0.1
0.01
0.1
T_C = 25_C
Single Pulse
100 ms
1s
10 s
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73106
S-41526—Rev. A, 16-Aug-04