SI7439DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

Si7439DP
Vishay Siliconix
New Product
a. Surface Mounted on 1” x 1” FR4 Board.
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −150 V, V_GS = 0 V
V_DS = −150 V, V_GS = 0 V, T_J = 70_C
V_DS = −10 V, V_GS = −10 V
V_GS = −10 V, I_D = −5.2 A
V_GS = −6 V, I_D = −5.0 A
V_DS = −15 V, I_D = −5.2 A
I_S = −4.2 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −75 V, V_GS = −10 V, I_D = −5.2 A
V_DD = −75 V, R_L = 15.5 W
I_D ^ −4.8 A, V_GEN = −10 V, R_g = 6 W
I_F = −2.9 A, di/dt = 100 A/ms
Min
Typ
Max Unit
−2.0
−4.0
V
"100
nA
−1
mA
−10
−30
A
0.073
0.090
W
0.077
0.095
19
S
−0.78
−1.2
V
88
135
17.5
nC
26.5
1.5
3
4.5
W
25
40
46
70
115
180
ns
64
100
100
150
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
35
V_GS = 10 thru 5 V
30
25
20
15
10
5
4V
0
0
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
T_C = 125_C
10
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V_GS − Gate-to-Source Voltage (V)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04