SI7439DP Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

New Product
P-Channel 150-V (D-S) MOSFET
Si7439DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
−150
0.090 @ V_GS = −10 V
0.095 @ V_GS = −6 V
I_D (A)
−5.2
−5.0
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7439DP-T1—E3
FEATURES
D TrenchFETr Power MOSFETS
D Ultra-Low On-Resistance Critical for Application
D Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% R_g and Avalanche Tested
APPLICATIONS
D Active Clamp in Intermediate DC/DC Power
Supplies
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
−150
"20
−5.2
−3.0
−4.1
−2.4
−50
−4.2
−1.6
−40
80
5.4
1.9
3.4
1.2
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
www.vishay.com
1