SI7439DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

New Product
Si7439DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
6000
Capacitance
0.12
0.09
0.06
V_GS = 6 V
V_GS = 10 V
0.03
0.00
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
10
V_DS = 75 V
8
I_D = 5.2 A
6
4
2
5000
C_iss
4000
3000
2000
1000
C_oss
0 C_rss
0
30
60
90
120
150
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
1.9
V_GS = 10 V
I_D = 5.2 A
1.6
1.3
1.0
0.7
0
0
15
30
45
60
75
90
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
0.4
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
10
T_J = 150_C
1
T_J = 25_C
0.16
0.12
I_D = 5.2 A
0.08
0.04
0.1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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