SI7434DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-CHANNEL 250-V (D-S) MOSFET

Si7434DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
Single Pulse Power, Juncion-to-Ambient
100
0.5
80
I_D = 250 mA
0.0
60
−0.5
40
−1.0
20
−1.5
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited
10
by r_DS(on)
1
0.1
0.01
0.001
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
1000
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
www.vishay.com
4
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 68_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72579
S-32408—Rev. A, 24-Nov-03