SI7434DP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-CHANNEL 250-V (D-S) MOSFET

New Product
N-Channel 250-V (D-S) MOSFET
Si7434DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
250
r_DS(on) (W)
0.155 @ V_GS = 10 V
0.162 @ V_GS = 6 V
I_D (A)
3.8
3.7
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7434DP-T1—E3
Creepage Clearance: 30 mils
FEATURES
D PWM-OptimizedTrenchFETr Power MOSFET
D 100% R_g Tested
D Avalanche Tested
APPLICATIONS
D Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
250
"20
3.8
2.3
3.0
1.8
40
4.3
1.6
13
8.4
5.2
1.9
3.3
1.2
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
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