SI7434DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-CHANNEL 250-V (D-S) MOSFET

Si7434DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 250 V, V_GS = 0 V
V_DS = 250 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 3.8 A
V_GS = 6.0 V, I_D = 3.7 A
V_DS = 15 V, I_D = 3.8 A
I_S = 2.8 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 100 V, V_GS = 10 V, I_D = 3.8 A
V_DD = 100 V, R_L = 25 W
I_D ^ 4.0 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.8 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
4.0
V
"100
nA
1
mA
15
30
A
0.129
0.155
W
0.131
0.162
14
S
0.75
1.2
V
34
50
6.8
nC
10.5
0.6
1.2
1.8
W
16
25
23
35
47
70
ns
19
30
100
150
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
V_GS = 10 thru 6 V
5V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
40
35
30
25
20
15
10
5
0
0
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
Document Number: 72579
S-32408—Rev. A, 24-Nov-03