SI7434DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-CHANNEL 250-V (D-S) MOSFET

New Product
Si7434DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
2500
Capacitance
0.24
0.18
0.12
V_GS = 6 V
V_GS = 10 V
0.06
0.00
0
8
16
24
32
40
I_D − Drain Current (A)
Gate Charge
10
V_DS = 100 V
I_D = 3.8 A
8
6
4
2
2000
C_iss
1500
1000
500
0
0
C_oss
C_rss
50
100
150
200
250
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 3.8 A
2.0
1.5
1.0
0
0
7
14
21
28
35
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
0.5
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
I_D = 3.8 A
0.15
0.10
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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