SI7407DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si7407DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-To-Ambient
50
0.3
I_D = 250 mA
40
0.2
30
0.1
20
0.0
-0.1
10
-0.2
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
2
1
Duty Cycle = 0.5
Safe Operating Area, Junction-To-Ambient
100
r_DS(on) Limited
I_DM Limited
10
1 ms
10 ms
I_D(on)
1 _Limited
0.1
T_C = 25_C
Single Pulse
100 ms
1s
10 s
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71912
S-22122—Rev. B, 25-Nov-02