SI7407DN Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si7407DN
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -400 mA
V_DS = 0 V, V_GS = "8 V
V_DS = -9.6 V, V_GS = 0 V
V_DS = -9.6 V, V_GS = 0 V, T_J = 85_C
V_DS v -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -15.6 A
V_GS = -2.5 V, I_D = -13.5 A
V_GS = -1.8 V, I_D = -5 A
V_DS = -6 V, I_D = -15.6 A
I_S = -3.2 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = -6 V, V_GS = -4.5 V, I_D = -15.6 A
V_DD = -6 V, R_L = 6 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -3.2 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
-0.40
-30
Typ Max Unit
-1.0
V
"100
nA
-1
mA
-5
A
0.009
0.012
0.013
0.016
W
0.019
0.024
52
S
-0.7
-1.2
V
39
59
6
nC
11
30
45
50
75
200
300
ns
165
250
60
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2 V
25
20
1.5 V
15
10
5
1V
0
0
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
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2
30
25
20
15
10
5
0
0.0
Transfer Characteristics
T_C = 125_C
25_C
-55 _C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 71912
S-22122—Rev. B, 25-Nov-02