SI7407DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
Si7407DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
5000
Capacitance
0.03
0.02
V_GS = 1.8 V
0.01
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
5
V_DS = 6 V
4
I_D = 15.6 A
4000
C_iss
3000
2000
1000
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.3
V_GS = 4.5 V
1.2
I_D = 15.6 A
3
1.1
2
1.0
1
0.9
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.8
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.04
T_J = 150_C
10
T_J = 25_C
0.03
0.02
I_D = 5 A
0.01
I_D = 15.6 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71912
S-22122—Rev. B, 25-Nov-02
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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