SI7407DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si7407DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.012 @ V_GS = -4.5 V
-12
0.016 @ V_GS = -2.5 V
0.024 @ V_GS = -1.8 V
I_D (A)
-15.6
- 13.5
- 11
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D Ultra-Low r_DS(on)
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
PowerPAKt 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
-12
"8
- 15.6
-9.9
- 11.2
-7.2
-30
-3.2
-1.3
3.8
1.5
2.0
0.8
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71912
S-22122—Rev. B, 25-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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