SI7120ADN Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

New Product
Si7120ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
T_J = 150 °C
0.08
10
0.06
I_D = 9.5 A
T_J = 25 °C
0.04
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 μA
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
P(t) = 100 ms
10
I_D(on)
1 Limited
P(t) = 1 ms
P(t) = 10 ms
0.1
T_A = 25 °C
Single Pulse
P(t) = 100 ms
P(t) = 1 s
P(t) = 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 72959
S10-1041-Rev. A, 03-May-10