SI7120ADN Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

New Product
Si7120ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
V_GS = 10 V thru 5 V
30
25
20
4V
15
10
5
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
10
5
0
0.0
0.05
3000
T_C = 125 °C
25 °C
- 55 °C
1.0
2.0
3.0
4.0
5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
0.03
V_GS = 4.5 V
0.02
V_GS = 10 V
0.01
0
0 5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 10 V
I_D = 9.5 A
8
6
4
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
2500
C_iss
2000
1500
1000
500
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
1.8
V_GS = 10 V
I_D = 9.5 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72959
S10-1041-Rev. A, 03-May-10
www.vishay.com
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