SI7120ADN Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

New Product
N-Channel 60 V (D-S) MOSFET
Si7120ADN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
60
R_DS(on) (Ω)
0.021 at V_GS = 10 V
0.031 at V_GS = 4.5 V
I_D (A)
9.5
7.9
PowerPAK^® 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7120ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
9.5
7.6
6.0
4.8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
I_DM
40
A
I_S
3.2
1.3
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
I_AS
22
E_AS
24
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.8
2.4
1.5
W
1.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 s
26
Steady State
R_thJA
65
33
81
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.9
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72959
S10-1041-Rev. A, 03-May-10
www.vishay.com
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