SI7120ADN Datasheet, PDF (2/12 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

Si7120ADN
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_SD
V_DS = V_GS , I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 9.5 A
V_GS = 4.5 V, I_D = 7.9 A
V_DS = 15 V, I_D = 9.5 A
I_S = 3.2 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 10 V, I_D = 9.5 A
V_DD = 30 V, R_L = 30 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 3.2 A, dI/dt = 100 A/µs
Min.
Typ.
Max. Unit
1.5
2.5
3.0
V
± 100 nA
1
µA
5
30
A
0.0175 0.021
Ω
0.025 0.031
35
S
0.78
1.2
V
30
45
6.9
nC
5.8
0.65
1.3
1.95
Ω
14
25
12
20
50
80
ns
12
20
60
100
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72959
S10-1041-Rev. A, 03-May-10