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SI6963BDQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET
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Si6963BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
200
Single Pulse Power, Junction-to-Ambient
0.4
160
ID = 250 mA
0.2
120
0.0
80
−0.2
40
−0.4
−50.0 −25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by rDS(on)
10
1 ms
1
0.1
0.01
0.1
10 ms
TC = 25_C
Single Pulse
100 ms
1s
10 s
dc
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 115_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
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Document Number: 72772
S-40439—Rev. A, 15-Mar-04
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