SI6963BDQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si6963BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.045 @ V_GS = −4.5 V
−20
0.080 @ V_GS = −2.5 V
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
Si6963BDQ
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6963BDQ-T1—E3
I_D (A)
−3.9
−3.0
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"12
−3.9
−3.4
−3.1
−2.7
−30
−1.0
−0.75
1.13
0.83
0.73
0.53
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
Document Number: 72772
S-40439—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
90
125
67
Maximum
110
150
80
Unit
_C/W
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