SI6963BDQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si6963BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = −20 V, V_GS = 0 V
V_DS = −20 V, V_GS = 0 V, T_J = 55_C
V_DS w −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −3.9 A
V_GS = −2.5 V, I_D = −3.0 A
V_DS = −10 V, I_D = −3.9 A
I_S = −1.0 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −10 V, V_GS = −4.5 V, I_D = −3.9 A
V_DD = −10 V, R_L = 10 W
I_D ^ −1 A, V_GEN = −4.5 V, R_g = 6 W
I_F = −1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
−0.6
−1.4
V
"100
nA
−1
mA
−10
−20
A
0.036
0.045
W
0.065
0.080
10
S
−0.71
−1.1
V
8.6
11
1.2
nC
2.8
7.0
W
33
50
57
90
65
100
ns
40
60
30
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20.0
V_GS = 5 thru 3 V
16.0
2.5 V
12.0
8.0
4.0
0.0
0.0
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2
2.0 V
1.5 V
1.0
2.0
3.0
4.0
5.0
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
20.0
T_C = −55_C
16.0
25_C
125_C
12.0
8.0
4.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
Document Number: 72772
S-40439—Rev. A, 15-Mar-04