SI6963BDQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si6963BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
1200.0
Capacitance
0.12
0.09
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0.0
4.0
8.0
12.0
16.0
20.0
I_D − Drain Current (A)
10.0
8.0
V_DS = 10 V
I_D = 3.9 A
Gate Charge
1000.0
C_iss
800.0
600.0
400.0
C_oss
200.0
0.0
0.0
C_rss
4.0
8.0
12.0
16.0
20.0
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 3.9 A
1.4
6.0
1.2
4.0
1.0
2.0
0.8
0.0
0.0
3.0
6.0
9.0 12.0 15.0 18.0
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 3.9 A
T_J = 25_C
0.04
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
Document Number: 72772
S-40439—Rev. A, 15-Mar-04
0.00
0
1
2
3
4
5
6
7
8
V_GS − Gate-to-Source Voltage (V)
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