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SI6926ADQ_05 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET
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Si6926ADQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
30
0.1
25
ID = 250 mA
−0.0
20
Single Pulse Power, Junction-to-Ambient
−0.1
15
−0.2
10
−0.3
5
−0.4
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited
by rDS(on)
IDM Limited
10
1
0.1
0.01
0.1
ID(on)
Limited
1 ms
10 ms
100 ms
TA = 25_C
1s
Single Pulse
10 s
dc
BVDSS Limited
1
10
100
VDS − Drain-to-Source Voltage (V)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 126_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
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