SI6926ADQ_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

New Product
Si6926ADQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.030 @ V_GS = 4.5 V
0.033 @ V_GS = 3.0 V
20
0.035 @ V_GS = 2.5 V
0.043 @ V_GS = 1.8 V
I_D (A)
4.5
4.2
3.9
3.6
D₁
D₂
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6926ADQ-T1—E3 (Lead Free)
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"8
4.5
4.1
3.6
3.3
20
0.83
0.69
1.0
0.83
0.64
0.53
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
R_thJA
R_thJF
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Typical
90
126
65
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
Maximum
125
150
80
Unit
_C/W
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