SI6926ADQ_05 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6926ADQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 5 V
V_GS = 4.5 V, I_D = 4.5 A
V_GS = 3.0 V, I_D = 4.2 A
V_GS = 2.5 V, I_D = 3.9 A
V_GS = 1.8 V, I_D = 3.6 A
V_DS = 10 V, I_D = 4.5 A
I_S = 0.83 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
Fall Time
t_r
t_d(off)
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 0.83 A, di/dt = 100 A/ms
Min Typ^a Max Unit
0.40
1.0
V
"100
nA
1
mA
5
10
A
0.024
0.030
0.026
0.033
W
0.029
0.035
0.035
0.043
26
S
0.6
1.1
V
7.5
10.5
1.2
nC
1.2
1.9
W
6
12
16
25
46
70
ns
9
15
20
40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 2 V
16
16
Transfer Characteristics
12
1.5 V
12
8
4
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
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2
8
T_C = 125_C
4
25_C
−55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS − Gate-to-Source Voltage (V)
Document Number: 72754
S-40230—Rev. A, 16-Feb-04