SI6926ADQ_05 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

New Product
Si6926ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
1200
Capacitance
0.04
0.03
V_GS = 2.5 V
V_GS = 3.0 V
0.02
V_GS = 4.5 V
0.01
0.00
0.0
4.0
8.0
12.0
16.0
20.0
I_D − Drain Current (A)
Gate Charge
6
V_DS = 10 V
5
I_D = 4.5 A
4
3
2
1
1000
C_iss
800
600
400
200
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 4.5 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
0.06
I_D = 4.5 A
0.05
0.04
0.03
0.02
0.01
0.00
0
1
2
3
4
5
6
7
8
V_GS − Gate-to-Source Voltage (V)
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
www.vishay.com
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