SI6876EDQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

Si6876EDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
100
80
60
40
20
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
Time (sec)
10 30
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
2
1
Duty Cycle = 0.5
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71822
S-20802—Rev. B, 01-Jul-02