SI6876EDQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

New Product
Si6876EDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 3 V
24
24
Transfer Characteristics
18
18
12
2V
6
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
0.070
On-Resistance vs. Drain Current
12
T_C = 125_C
6
25_C
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
0.056
1.4
V_GS = 10 V
0.042
1.2
0.028
V_GS = 4.5 V
1.0
0.014
V_GS = 2.5 V
0.8
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Threshold Voltage
0.4
0.08
0.06
I_S1S2 = 6.2 A
0.2
I_S1S2 = 250 mA
- 0.0
0.04
- 0.2
0.02
- 0.4
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Document Number: 71822
S-20802—Rev. B, 01-Jul-02
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
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