SI6876EDQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

New Product
Si6876EDQ
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_S1S2 (V)
r_S1S2(on) (Ω)
0.025 @ V_GS = 10 V
30
0.030 @ V_GS = 4.5 V
0.050 @ V_GS = 2.5 V
I_S1S2 (A)
6.2
5.7
4.5
FEATURES
D TrenchFETr Power MOSFET
D Ultra-Low r_SS(on)
D 4-kV ESD Protection
APPLICATIONS
D Battery Protection Circuitry
- 1-2 Cell Li+/LiP
S₁
TSSOP-8
S₁ 1 _D
S_{1 2}
S_{1 3}
Si6876EDQ
G₁ 4
Top View
8 S2
7 ^S2
6 ^S2
5 G2
G₁
R
R
G₂
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Source1—Source2 Voltage
Gate-Source Voltage
Continuous Source1—Source2 Current
(T_J = 150_C)^a
Pulsed Source1-Source2 Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_S1S2
V_GS
I_S1S2
I_SM
P_D
T_J, T_stg
T30
"12
6.2
5.0
5.0
4.0
30
1.78
1.19
1.14
0.76
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Source)^a
t v 10 sec.
Steady State
Steady State
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71822
S-20802—Rev. B, 01-Jul-02
Symbol
R_thJA
R_thJF
Typical
55
85
35
Maximum
70
105
45
Unit
_C/W
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