SI6876EDQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

Si6876EDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Source Current
On-State Source Current^a
Source1-Source2 On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_GS(th)
I_GSS
I_S1S2
I_S(on)
r_S1S2(on)
g_fs
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "12 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 10 V, I_D = 6.2 A
V_GS = 4.5 V, I_D = 5.7 A
V_GS = 2.5 V, I_D = 4.5 A
V_DS = 10 V, I_D = 6.2 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.45
1.5
V
"500
nA
"10
mA
1
mA
25
20
A
0.020
0.025
0.024
0.030
W
0.037
0.050
39
S
1.3
2.5
3
6
ms
10
20
5.2
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
2
10,000
Gate Current vs. Gate-Source Voltage
1,000
100
10
T_J = 150_C
1
0.1
0.01
0
T_J = 25_C
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
Document Number: 71822
S-20802—Rev. B, 01-Jul-02