SI6821DQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel, Reduced Qg, MOSFET with Schottky Diode

Si6821DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
T_J = 150_C
0.4
T_J = 25_C
0.2
I_D = 1.7 A
1
0.2
0.4
0.6
0.8
1.0
1.8
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.50
I_D = 250 mA
0.25
0.00
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
30
25
20
15
–0.25
–0.5
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
10
5
0
0.01
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 115_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70791
S-56954—Rev. C, 01-Mar-99