SI6821DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel, Reduced Qg, MOSFET with Schottky Diode

Si6821DQ
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = –20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V, T_J = 55_C
V_DS w –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –1.7 A
V_GS = –3.0 V, I_D = –1.3 A
V_DS = –10 V, I_D = –1.7 A
I_S = –1 A, V_GS = 0 V
–0.6
–6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –3.5 V, V_GS = –4.5 V, I_D = –0.3 A
V_DD = –3.5 V, R_L = 11.5 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –1 A, di/dt = 100 A/ms
Typ
0.135
0.200
4.0
–0.77
3.5
0.85
0.60
7
10
11
7
35
Max Unit
V
"100
nA
–1
mA
–25
A
0.190
W
0.280
S
–1.2
V
7.0
nC
15
20
20
ns
15
60
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1 A
I_F = 1 A, T_J = 125_C
V_r = 20 V
V_r = 20 V, T_J = 75_C
V_r = 20 V, T_J = 125_C
V_r = 10 V
Typ
0.45
0.36
0.003
0.1
2
62
Max
0.5
0.42
0.100
1
10
Unit
V
mA
pF
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2-2
Document Number: 70791
S-56954—Rev. C, 01-Mar-99