SI6821DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel, Reduced Qg, MOSFET with Schottky Diode

New Product
Si6821DQ
Vishay Siliconix
P-Channel, Reduced Q_g, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–20
r_DS(on) (W)
0.190 @ V_GS = –4.5 V
0.280 @ V_GS = –3.0 V
I_D (A)
"1.7
"1.3
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
20
V_F (V)
Diode Forward Voltage
0.5 V @ 1 A
I_F (A)
1.5
TSSOP-8
S
K
D1_D
8K
G
S2
Si6821DQ
7A
S3
6A
G4
5A
Top View
D
A
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
V_KA
V_GS
–20
20
"12
Continuous Drain Current (T_J = 150_C) (MOSFET)^{a, b}
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^{a, b}
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^{a, b}
Maximum Power Dissipation (Schottky)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
"1.7
"1.3
"8
–1.0
1.5
30
1.2
0.76
1.0
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)^a
Maximum Junction-to-Ambient (t = steady state)^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
Typical
115
130
Maximum
105
125
Unit
_C/W
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