SI6821DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel, Reduced Qg, MOSFET with Schottky Diode

New Product
Si6821DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
4.5 V
4V
3.5 V
8
8
6
6
3V
MOSFET
Transfer Characteristics
T_C = –55_C
25_C
125_C
4
4
2.5 V
2
1.5 V
2V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
Capacitance
600
0.4
0.3
V_GS = 3.0 V
0.2
0.1
V_GS = 4.5 V
500
400
300
200
100
C_rss
C_iss
C_oss
0
0
2
4
6
8
I_D – Drain Current (A)
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
Gate Charge
5
V_DS = 3.5 V
4
I_D = 0.3 A
3
2
1
2.0 ^{On-Resistance vs. Junction Temperature}
V_GS = 4.5 V
I_D = 1.7 A
1.6
1.2
0.8
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Q_g – Total Gate Charge (nC)
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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