SI6469DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6469DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.06
T_J = 150_C
10
0.05
0.04
I_D = 6.0 A
0.03
T_J = 25_C
0.02
0.01
1
0.00 0.2
0.4
0.6
0.8
1..0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0.6
I_D = 250 mA
0.4
0.2
–0.0
–0.2
–0.4
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0
30
25
20
15
10
5
0
0.01
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70858
S-60717—Rev. A, 01-Feb-99