SI6469DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6469DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –6.4 V, V_GS = 0 V
V_DS = –6.4 V, V_GS = 0 V, T_J = 70_C
V_DS w –8 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –6.0 A
V_GS = –3.3 V, I_D = –5.8 A
V_GS = –2.5 V, I_D = –5.0 A
V_GS = –1.8 V, I_D = –3.6 A
V_DS = –8 V, I_D = –6.0 A
I_S = –1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
V_DS = –6 V, V_GS = –4.5 V, I_D = –6.0 A
V_DD = –6 V, R_L = 6 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –1.25 A, di/dt = 100 A/ms
Min Typ^b Max Unit
–0.45
V
"100
nA
–1
mA
–25
–30
A
0.021
0.028
0.024
0.031
W
0.030
0.040
0.048
0.065
18
S
–0.68
–1.1
V
20
40
4.5
nC
3.6
20
50
30
60
85
150
ns
50
90
50
100
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2-2
Document Number: 70858
S-60717—Rev. A, 01-Feb-99