SI6469DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6469DQ
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
–8
r_DS(on) (W)
0.028 @ V_GS = –4.5 V
0.031 @ V_GS = –3.3 V
0.040 @ V_GS = –2.5 V
0.065 @ V_GS = –1.8 V
I_D (A)
"6.0
"5.8
"5.0
"3.6
TSSOP-8
D1_D
S2
Si6469DQ
S3
G4
Top View
8D
7S
6S
5D
S
G
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–8
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"6.0
"5.0
"30
–1.25
1.5
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t v 10 sec
Steady State
R_thJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70858
S-60717—Rev. A, 01-Feb-99
Typical
95
Maximum
83
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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